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Temperature Sensing for Power MOSFETs in Short-Duration Avalanche Mode

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The purpose of this paper is based on the estimation of power MOSFET junction temperature during a shortduration avalanche mode. Therefore, an experiment has been developed and results have been correlated with simple electrothermal modeling. The simple electrothermal model allows
monitoring of junction temperature by simple measurements of the ID(t) andBVdss(t) waveforms. Accurate extraction of model parameters is linked with precise recording of the instantaneous avalanche voltage. Indeed, avalanche voltage is impacted by two phenomena, namely, the current-induced ohmic voltage drop and
the shift of the breakdown voltage due to self-heating effects. This paper highlighted that during avalanche behavior, MOSFETs exhibit a dynamic avalanche resistance Rav, which is far in excess
of their classical ON-state resistance Rdson.
Index Terms—Avalanche mode, avalanche resistance, electrothermal modeling, power MOSFETs.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

: ., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

yuli/agus

Versi lain/terkait

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