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Thermomechanical Failure Analysis of Through-Silicon Via Interface Using a Shear-Lag Model With Cohesive Zone

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An analytical approach to predict initiation and growth of interfacial delamination in the through-silicon via structure is developed by combining a cohesive zone model with a shear-lag model. Two critical temperatures are predicted for damage initiation and fracture initiation, respectively. It is found that via extrusion significantly increases beyond the second critical temperature. The dependence of the critical temperatures on the material/interfacial properties, as well as the via size (diameter
and height), is discussed. In parallel with the analytical approach, finite-element models with cohesive interface elements are employed to numerically simulate the initiation and the progression of interfacial delamination. The numerical results are in good agreement with the analytical solution, and both are qualitatively consistent with reported experimental findings by others.
Index Terms—Cohesive zone model (CZM), finite-element analysis (FEA), interfacial reliability, shear-lag model, thermal stresses, thermomechanical, through-silicon via (TSV).

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Ketersediaan

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

: ., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

yuli/agus

Versi lain/terkait

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