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Improved Performance of InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric Annealed in Oxygen

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We have fabricated an amorphous InGaZnO thinfilm transistor with HfLaO gate dielectric, and the influence of annealing the gate dielectric in oxygen on the device characteristics is investigated in detail. It is demonstrated that this annealing treatment can effectively suppress the negative oxide charges.
In addition, the effect of this annealing treatment to suppress the acceptor-like border and interface traps has been discovered, which can explain the unusual phenomenon of counterclockwise hysteresis. Accordingly, a record-high saturation carrier mobility of 35.2 cm2/V · s has been achieved for the device, and its threshold voltage, subthreshold swing, and on-off current ratio are 2.8 V, 0.292 V/dec, and 5.2 × 106, respectively.
Index Terms—Amorphous InGaZnO (a-IGZO), thin-film transistor (TFT), HfLaO, high-k, annealing, mobility.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

New York : IEEE., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

1530-4388

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1, MARCH 2014

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

Yuli/Agus

Versi lain/terkait

Lampiran Berkas

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