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Analytical Modeling of Dielectric Pocket Double-Gate MOSFET Incorporating Hot-Carrier-Induced Interface Charges

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In this paper, the impact of interface charges on the performance of a short-channel symmetric dielectric pocket double-gate (DP-DG) MOSFET has been investigated. An analytical drain current model for DP-DG MOSFET has been developed, which is also useful for investigating the impact of dual-material
ATLAS 3-D simulator. In addition, exhaustive simulation has been carried out to address the impact of interface charges on the reliability issues of various devices, i.e., DP-DG, double-gate, and dielectric pocket architectures in terms of gate leakage current, electron temperature, and impact of interface charges on the threshold voltage lowering. Analog and digital performances have also been investigated and compared with the other devices.
Index Terms—Analytical model, CMOS inverter, dielectric pocket, double gate, dual-material gate, hot-carrier-induced charges.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

New York : IEEE., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

1530-4388

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1, MARCH 2014

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

Yuli/Agus

Versi lain/terkait

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