Elibrary Perpustakaan Universitas Riau

Ebook, artikel jurnal dan artikel ilmiah

  • Beranda
  • Informasi
  • Berita
  • Bantuan
  • Pustakawan
  • Area Anggota
  • Pilih Bahasa :
    Bahasa Arab Bahasa Bengal Bahasa Brazil Portugis Bahasa Inggris Bahasa Spanyol Bahasa Jerman Bahasa Indonesia Bahasa Jepang Bahasa Melayu Bahasa Persia Bahasa Rusia Bahasa Thailand Bahasa Turki Bahasa Urdu

Pencarian berdasarkan :

SEMUA Pengarang Subjek ISBN/ISSN Pencarian Spesifik

Pencarian terakhir:

{{tmpObj[k].text}}
No image available for this title
Penanda Bagikan

e-journal

Circuit-Level Simulation of a CNTFET With Unevenly Positioned CNTs by Linear Programming

Geunho Cho - Nama Orang; Fabrizio Lombardi - Nama Orang;

Abstract—The carbon nanotube field-effect transistor (CNTFET) has been advocated as one of the possible alternatives to replace the MOSFET. Some of the likely defect types that may occur in its manufacturing process are the presence of undeposited CNTs and the change in CNT diameter. Existing simulation
models are inadequate to assess the effect of undeposited CNTs, due to the limitation in representing these CNT defects for circuit-level simulation and the high execution complexity. In this paper, a new method to evaluate CNTFETs with uneven spacing between CNTs (such as due to undeposited CNTs as defects) for circuit-level simulation is proposed; it is based on an equivalence relationship in some key performance metrics (current and gate capacitance) between CNTFETs with evenly/unevenly positioned
CNTs. This relationship requires the adjustment of different parameters of the CNTFET. Using existing CNTFET models (based on MATLAB and HSPICE), linear programming is utilized to find the values of the relevant parameters (number, pitch, doping level, and chirality) of the simulation tools. The equivalence relationship is then established for circuit-level simulation. Different performance metrics (delay and energy) are presented for a five-stage fan-out-of-four inverter chain, under the conditions of evenly and unevenly positioned CNTs in the CNTFET. Computational requirements (such as simulation time and memory usage) of the proposed approach are reported; it is shown that the equivalence relation by adjusting the required parameters and the circuit-level evaluation of the CNTFET is computationally possible at a modest error (6% on average).
Index Terms—CNT, CNTFET, defect model, emerging technologies, manufacturing, simulation.


Ketersediaan

Tidak ada salinan data

Informasi Detail
Judul Seri
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
No. Panggil
-
Penerbit
New York : IEEE., 2014
Deskripsi Fisik
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014
Bahasa
English
ISBN/ISSN
1530-4388
Klasifikasi
-
Tipe Isi
-
Tipe Media
-
Tipe Pembawa
-
Edisi
VOL. 14, NO. 1, MARCH 2014
Subjek
TEKNIK
Info Detail Spesifik
-
Pernyataan Tanggungjawab
Yuli/Agus
Versi lain/terkait

Tidak tersedia versi lain

Lampiran Berkas
  • FULL TEXT. Circuit-Level Simulation of a CNTFET With Unevenly Positioned CNTs by Linear Programming
Komentar

Anda harus masuk sebelum memberikan komentar

Elibrary Perpustakaan Universitas Riau
  • Informasi
  • Layanan
  • Pustakawan
  • Area Anggota

Tentang Kami

As a complete Library Management System, SLiMS (Senayan Library Management System) has many features that will help libraries and librarians to do their job easily and quickly. Follow this link to show some features provided by SLiMS.

Cari

masukkan satu atau lebih kata kunci dari judul, pengarang, atau subjek

Donasi untuk SLiMS Kontribusi untuk SLiMS?

© 2025 — Senayan Developer Community

Ditenagai oleh SLiMS
Pilih subjek yang menarik bagi Anda
  • Karya Umum
  • Filsafat
  • Agama
  • Ilmu-ilmu Sosial
  • Bahasa
  • Ilmu-ilmu Murni
  • Ilmu-ilmu Terapan
  • Kesenian, Hiburan, dan Olahraga
  • Kesusastraan
  • Geografi dan Sejarah
Icons made by Freepik from www.flaticon.com
Pencarian Spesifik
Kemana ingin Anda bagikan?