Gaya APA

[et.al.], G, W. (2014). Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K (VOL. 14, NO. 1, MARCH 2014). New York: IEEE.

Gaya MLA

[et.al.], Guoying, Wu. "Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K". VOL. 14, NO. 1, MARCH 2014 New York: IEEE, 2014. e-journal.