e-journal

Combined MOS–IGBT–SCR Structure for a Compact High-Robustness ESD Power Clamp in Smart Power SOI Technology

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Smart power technologies are required to withstand high-electrostatic-discharge (ESD) robustness under both powered and unpowered conditions, particularly for automotive and aeronautic applications among many others. They are concurrently confronted to the challenges of high-temperature operation in order to reduce heat-sink-related costs. In this context, very compact high-robustness ESD protections with low sensitivity to temperature are required. To fulfill this need, we studied a new ESD protection structure that combines in the same component MOS, IGBT, and thyristor effects. This is achieved by inserting in
the same LDMOS device P+ diffusions in the drain. We studied the impact of N+/P+ ratios on RON and holding current at high temperatures. Structure optimization has been realized with 3-D TCAD simulation and experimentally validated. The proposed structures provide high ESD robustness with small footprint and
reduced temperature sensitivity compared with classical solutions. Original design solutions to improve their immunity to latchup are also presented.
Index Terms—ESD protection, latch-up, power clamp, SCR, SOI technology.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

New York : IEEE., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

1530-4388

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1, MARCH 2014

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

Yuli/Agus

Versi lain/terkait

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