e-journal

Exposing Reliability/Performance Tradeoff in Non-Volatile Memories Through Erratic Bits Signature Classification

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The erratic bits (EB) phenomenon in nonvolatile memory devices (NVMs) has been evidenced in several technologies as a main reliability detractor. Usually, this issue is handled by repair strategies, which spans from static redundancy to dynamic correction codes. This evidences a tradeoff in a reliability/
performance domain that is due to the limitation in the repair resources amount and correction strength. In this paper, we expose this tradeoff in different NVM technologies such as embedded NOR Flash and phase-change memory devices through accurate EB testing, signature classification procedure, and chip failure rate estimation.
Index Terms—Erratic bits, error correction codes, performance, redundancy, reliability, semiconductor memories, trade-off.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

New York : IEEE., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

1530-4388

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1, MARCH 2014

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

Yuli/Agus

Versi lain/terkait

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