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Quantitative Characterization of the Liquid Crystal Doped With Nanoscaled Tin-Doped Indium Oxide Under High Electric Fields

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In this paper, a pulse circuit was designed to simulate the source of an electrostatic discharge (ESD). This high-voltage source was successfully used in ESD tests to precisely control the voltage exerted on the liquid crystal (LC) cells. In addition, the characteristics of the samples under ESD were measured by a more precise pulse source. According to the measurement of the relaxation of the sticking images, the behavior of the tin-doped indium oxide (ITO) nanoparticles in the LC was investigated in detail. It was confirmed that the amount of ITO may affect the speed of releasing high-voltage charges after the attack of ESD. In addition, we tried to estimate the resistivity and density of the conductive ITO bridges.
Index Terms—Electrostatic discharges, liquid crystal displays, liquid crystals, impurities.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

New York : IEEE., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

1530-4388

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1, MARCH 2014

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

Yuli/Agus

Versi lain/terkait

Lampiran Berkas

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