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AC Variability and Endurance Measurement Technique for Resistive Switching Memories

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Variability in resistive switching memory (RRAM) devices is studied by applying an AC measurement setup capable of efficiently collecting read current data in low and high resistance states (LRS and HRS, respectively) in each consecutive pulse SET/RESET cycle. It is found that HRS and LRS read current
values follow the lognormal and normal distributions, respectively. Endurance test demonstrates that, in a small percentage of cycles, the set operation may fail, which might be missed when a conventional approach of a limited number of read operations is employed.
Index Terms—Low resistance state (LRS), high resistance state (HRS).

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

New York : IEEE., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

1530-4388

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1, MARCH 2014

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

Yuli/Agus

Versi lain/terkait

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