Dielectric Breakdown of Al2O3/HfO2 Bi-Layer Gate Dielectric | Elibrary Perpustakaan Universitas Riau

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Dielectric Breakdown of Al2O3/HfO2 Bi-Layer Gate Dielectric

Kartika Chandra Sahoo - Nama Orang; Anthony S. Oates - Nama Orang;

We investigate the dielectric breakdown of aluminum oxide (Al2O3) interfacial layers compared with SiO2 used in the high-k gate dielectric stacks. We predict the maximum operating voltage for a ten-year lifetime, using extracted values of Weibull β, voltage power law exponent (n), and breakdown voltage. We
show that the Al2O3 interface layer reliability is sufficient for it to be considered as a replacement for SiO2.
Index Terms—Al2O3, aluminum oxide, voltage ramp stress, dielectric breakdown, EOT scaling, TDDB, VRS.

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Judul Seri: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
No. Panggil: -
Penerbit: New York : IEEE., 2014
Deskripsi Fisik: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014
Bahasa: English
ISBN/ISSN: 1530-4388
Klasifikasi: -
Tipe Isi: -
Tipe Media: -
Tipe Pembawa: -
Edisi: VOL. 14, NO. 1, MARCH 2014
Subjek: TEKNIK
Info Detail Spesifik: -
Pernyataan Tanggungjawab: Yuli/Agus

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