Gaya APA

[et.al.], J, X, C. (2014). Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer (VOL. 14, NO. 1, MARCH 2014). New York: IEEE.

Gaya MLA

[et.al.], J., X., Chen. "Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer". VOL. 14, NO. 1, MARCH 2014 New York: IEEE, 2014. e-journal.