e-journal

Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer

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Abstract—The characteristics of oxynitride thermally grown in either NO or N2O ambient as a tunnel layer are investigated based on an Al/Al2O3/GdON/SiOxNy/Si structure. The physical thickness of each dielectric layer was measured and confirmed by multiwavelength ellipsometry and transmission electron microscopy.
Experimental results reveal that better memory performances can be achieved for the metal–oxide–nitride–oxide–silicon (MONOS) device with NO-grown oxynitride as the tunnel layer, e.g., larger memory window, higher program/erase speed, better endurance, and retention characteristics, compared with devices
with N2O-grown oxynitride and conventional SiO2 as the tunnel layer. The involved mechanisms lie in NO-nitridation-induced smaller hole barrier height, formation of more strong Si–N bonds at/near the oxynitride/Si interface due to more nitrogen incorporation in the tunnel layer. Therefore, the application of NO-grown oxynitride as tunnel layer is promising in advanced MONOS nonvolatile memory devices.
Index Terms—MONOS, tunnel layer, NO-grown oxynitride, N2O-grown oxynitride.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

New York : IEEE., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

1530-4388

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1, MARCH 2014

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

Yuli/Agus

Versi lain/terkait

Lampiran Berkas

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