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Optimization of Reactive Ion Etching of Polycrystalline Diamond for MEMS Applications

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Abstract—It has been found that diamond columns can be formed unintentionally in reactive ion etching (RIE) with O2 plasma even without a precoated metal layer. The experimental results indicate that
the existence of these diamond columns prevents the effective removal of polycrystalline diamond (poly-C), also known as microcrystalline diamond. A three-step sequential RIE of poly-C thin film in CF4
(or CF4/Ar), O2, and H2 plasmas is developed using lithographically patterned Al acting as a hard mask to achieve a smooth-etched surface after the removal of poly-C. This etching technique can remove a thick poly-C layer very effectively. For the first time, this letter eliminates RIE-related damage to underlying substrate (specific to RIE of poly-C) to optimize the technology for single- and multi-material MEMS made from poly-C.

Index Terms—Diamond, microelectromechanical systems (MEMS), micromachining, reactive ion etching (RIE).

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Informasi Detail

Judul Seri

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No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 24, NO. 6, DECEMBER 2015

Bahasa

English

ISBN/ISSN

1057-7157

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 24, NO. 6, DECEMBER 2015

Subjek

ELEKTROMEKANIKAL

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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