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Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA) MOSFET using center potential

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In this paper, an analytical threshold voltage model is proposed for a cylindrical gate-allaround (CGAA) MOSFET by solving the 2-D Poisson’s equation in the cylindrical coordinate system. A comparison is made for both the center and the surface potential model of CGAA MOSFET. This paper claims that the calculation of threshold voltage using center potential is more accurate rather than the calculation from surface potential. The effects of the device parameters like the drain bias ðVDSÞ, oxide thickness ðtoxÞ, channel thickness (r), etc., on the threshold voltage are also studied in this paper. The model is verified with 3D numerical device simulator Sentaurus from Synopsys Inc.

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Ketersediaan

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Informasi Detail

Judul Seri

Ain Shams Engineering Journal

No. Panggil

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Penerbit

: Elsevier., 2015

Deskripsi Fisik

Ain Shams Engineering Journal (2015) 6, 1171–1177

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

KIMIA

Info Detail Spesifik

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Pernyataan Tanggungjawab

Wati/Agus

Versi lain/terkait

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