Control of Epitaxial Growth of SiGe

Abstract Silicon-Germanium (SiGe), used to boost pFET performance and enhance the properties of high-k metal gate devices, is grown by selective epitaxy on silicon. Since device parameters depend critically on the deposited SiGe thickness, we apply several advanced techniques to control deposition. Feedback and feed-forward of growth rate data is used to control deposition tools. We also appl…