Electrical and physical properties of HfO2 as gate dielectrics using various …

Abstract. MIS capacitors with 16-nm high-k dielectric HfO2 and 50–150 nm TaN electrode were studied after postmetal- annealing (PMA) at various conditions. The effect of TaN thickness on electrical and physical properties is summarized. It has been found that the thermal stability of the TaN/HfO2 depends on TaN thickness. A reduction of leakage current and an increase of breakdown voltage…