Experimental Analysis of Vapor HF Etch Rate and Its Wafer Level Uniformity on…

Abstract—This paper presents the characterization results of the release step with vapor hydrofluoric acid on a Complementary Metal Oxide Semiconductor-Microelectromechanical Systems (CMOS-MEMS) process obtained with a new methodology for controlling the release etch process of CMOS-MEMS devices. The effect of release hole size on etch rate and uniformity was investigated. No appreciable eff…