This paper presents measurement results of alphaparticle-induced soft errors and multiple-cell upsets (MCUs) in 65-nm 10T SRAM with a wide range of supply voltage from 1.0 to 0.3 V. We reveal that the soft-error rate (SER) at 0.3 V is six times higher than that at 1.0 V and the MCU rate significantly increases in the subthreshold region. To investigate the reason for the MCU increase, the depe…