Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxi…

Abstract—The characteristics of oxynitride thermally grown in either NO or N2O ambient as a tunnel layer are investigated based on an Al/Al2O3/GdON/SiOxNy/Si structure. The physical thickness of each dielectric layer was measured and confirmed by multiwavelength ellipsometry and transmission electron microscopy. Experimental results reveal that better memory performances can be achieved for …