Failure Analysis of Superjunction VDMOS Under UIS Condition

The failure mechanisms for two kinds of the 750-V Superjunction VDMOS (SJ-VDMOS) devices with different charge imbalance conditions (Qp < Qn and Qp > Qn) under unclamped inductive switching (UIS) condition are investigated in detail by experiments and 2-D devices simulations in this paper. For Qp < Qn, only the channel current appears in the device during the UIS turn-off process, and the aval…