Dielectric Breakdown of Al2O3/HfO2 Bi-Layer Gate Dielectric

We investigate the dielectric breakdown of aluminum oxide (Al2O3) interfacial layers compared with SiO2 used in the high-k gate dielectric stacks. We predict the maximum operating voltage for a ten-year lifetime, using extracted values of Weibull β, voltage power law exponent (n), and breakdown voltage. We show that the Al2O3 interface layer reliability is sufficient for it to be considered a…