Improved Performance of InGaZnO Thin-Film Transistor With HfLaO Gate Dielectr…

We have fabricated an amorphous InGaZnO thinfilm transistor with HfLaO gate dielectric, and the influence of annealing the gate dielectric in oxygen on the device characteristics is investigated in detail. It is demonstrated that this annealing treatment can effectively suppress the negative oxide charges. In addition, the effect of this annealing treatment to suppress the acceptor-like border…