Preparation and characterization of TaAlOx high-κ dielectric for metal–ins…

Abstract. Metal–insulator–metal (MIM) capacitors with excellent electrical properties have been fabricated using high-κ TaAlOx-based dielectrics. TaAlOx films having thickness of 11.5–26.0 nm, with equivalent oxide thickness (EOT) of ~2.3–5.3 nm were deposited on top of Au/SiO2 (180 nm)/Si (100) structures by radio frequency magnetron co-sputtering of Ta2O5 and Al2O3 targets. The s…