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Ditemukan 1 dari pencarian Anda melalui kata kunci: author=Oleg Semenov
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Impact of Gate Induced Drain Leakage on Overall Leakage of Submicrometer CMOS…
Komentar Bagikan
Oleg SemenovAndrzej PradzynskiManoj Sachdev

Abstract In this paper, the impact of gate induced drain leakage (GIDL) on the overall leakage of submicrometer VLSI circuits is studied. GIDL constitutes a serious constraint, with regards to off-state current, in scaled down complimentary metal–oxide–semiconductor (CMOS) devices for DRAM and/or EEPROM applications. Our research shows that the GIDL current is also a serious problem in sca…

Edisi
VOL. 15, NO. 1, FEBRUARY 2002
ISBN/ISSN
0894-6507
Deskripsi Fisik
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 15, NO. 1, FEBRUARY 2002
Judul Seri
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 15, NO. 1, FEBRUARY 2002
No. Panggil
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