Linear Drain Current Degradation of FG-pLEDMOS Transistor Under Pulse Gate St…

Linear drain current degradation of a field-gate p-channel lateral extended drain MOS (FG-pLEDMOS) transistor for different ac hot-carrier stress conditions has been experimentally investigated in this paper. It is noted that hot-carrier degradation strongly depends on the time of the rising and falling edges of the gate signal pulse. Faster rising and falling edges of the gate pulse will indu…