Full-Wafer Voltage Contrast Inspection for Detection of BEOL Defects

Abstract This paper details an application where E-beam inspection (EBI) can be used for 100% full wafer inspection, generally considered a mythical target for EBI. For process layers where the line-widths and defects of interest are large, very large pixel size and high scan frequency can be used, thereby making full wafer inspection feasible. The metal layers in the back-endof-line fit this …