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Ditemukan 1 dari pencarian Anda melalui kata kunci: author=Satoshi Shibata
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Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted…
Komentar Bagikan
Akihiko SagaraAkira UedonoSatoshi Shibata

Abstract—We investigated the thermal behavior of defects remaining in low-dose (700 ◦C to remove residual damage as well as to activate impurities. Index Terms—Residual damage, ion implantation, rapid thermal annealing (RTA), silicon.

Edisi
VOL. 28, NO. 1, FEBRUARY 2015
ISBN/ISSN
0894-6507
Deskripsi Fisik
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 1, FEBRUARY 2015
Judul Seri
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 1, FEBRUARY 2015
No. Panggil
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