Conduction Mechanisms and Breakdown Characteristics of Al2O3-Doped ZrO2 High-…

This paper presents the results of I–V and constant-voltage-stress measurements on symmetrical dielectric ZrO2/Al2O3/ZrO2 film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal–insulator–metal capacitors. The temperaturedependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated.…