A Study of Cu/CuMn Barrier for 22-nm Semiconductor Manufacturing

The barrier properties of self-forming barrier aresensitive to the thickness, annealing temperature, annealing time, and impurity concentration of itself. In this paper, the properties of Cu/CuMn/SiO2 bilayer structures were investigated, and an optimized thickness of Cu and CuMn alloy used as barrier layers in these bilayer structures was also determined. The bilayer structure could reduce the…