Correlational Study Between SiN Etch Rate and Plasma Impedance in Electron Cy…

Abstract The correlation between the change in the etching rate of SiN and the change in the monitored plasma impedance was investigated to estimate the capability of critical dimension (CD) prediction with a plasma impedance monitor (PIM). The results obtained with the PIM were compared with those of optical emission spectroscopy (OES), which was performed using the emission intensity ratio …