Temperature Sensing for Power MOSFETs in Short-Duration Avalanche Mode

The purpose of this paper is based on the estimation of power MOSFET junction temperature during a shortduration avalanche mode. Therefore, an experiment has been developed and results have been correlated with simple electrothermal modeling. The simple electrothermal model allows monitoring of junction temperature by simple measurements of the ID(t) andBVdss(t) waveforms. Accurate extraction …