Reliability Studies on High-Temperature Operation of Mixed As/Sb Staggered Ga…

The reliability of structural and electrical properties of mixed As/Sb staggered gap tunnel field-effect transistors (TFETs) for high-temperature operation was comprehensively investigated from 25 ◦C to 150 ◦C. Temperature-dependent X-ray measurements showed identical strain relaxation of the active region, indicating that no additional dislocations were introduced at 150 ◦C. Symmetric 2-…