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Higher-K titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

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In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal–insulator–metal (MIM) capacitors.
The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low
leakage current of 7.5  10-7 A/cm2 at 1 V. Comparing to the control samples of TiLaO (TLO), TLAO
dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better
time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with
the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.

Keywords:
Metal–insulator–metal capacitor
LaAlO3
Al2O3

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Informasi Detail

Judul Seri

Solid-State Electronics

No. Panggil

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Penerbit

New York : Elsevier Ltd.., 2010

Deskripsi Fisik

Solid-State Electronics 54 (2010) 646–649

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

54 (2010) 646–649

Subjek

FISIKA MATERIAL

Info Detail Spesifik

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Pernyataan Tanggungjawab

agus

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