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Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate

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(Ga,In)N/GaN multiple quantum well blue light emitting diodes (LEDs) grown on mesa-patterned silicon substrates
with improved electro-optic characteristics are demonstrated.The active regions are grown on top of high-reflectivity AlN/(Al,Ga)N distributed Bragg reflectors (DBRs). Due to efficient stress relaxation at the mesa edges, crack formation during growth or upon the post-growth coolingdown of the samples can be avoided. A large number of
AlN/(Al,Ga)N bilayers in the DBR can be then included in the LED structures leading to strong enhancement of the LED device output power in spite of the presence of the absorbing silicon substrate at the LED emission wavelength.
Photograph of a blue light emitting diode (I¼20 mA) grown on top of a high reflectivity distributed Bragg reflector on a mesa-patterned silicon substrate.

Keywords distributed Bragg reflector, light emitting diode, mesa, silicon substrate

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Informasi Detail

Judul Seri

Phys. Status Solidi

No. Panggil

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Penerbit

: The Authors., 2015

Deskripsi Fisik

Phys. Status Solidi A 212, No. 10, 2297–2301 (2015)

Bahasa

English

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Tipe Media

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Edisi

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Subjek

FISIKA

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