e-journal

Analysis of Temperature Distribution in Stacked IC With On-Chip Sensing Device Arrays

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Abstract
Temperature distributions in 3-D integrated circuits (ICs) are analyzed with a test structure, which has a top-tier chip attached on a bottom dummy chip with adhesive layer. The devices with four kinds of top-tier chip thickness tSi of 50–410 μm were fabricated by a standard 0.18 μm CMOS process. The test
structure consists of 24 sensor blocks, each of which has sensor p-n diodes, an on-chip heater resistor, and selector switches. The temperature distributions of the top-tier test chip under
the constant and pulsed heater power were analyzed by both measurements and thermal simulations. Temperature T, which decreases with the distance L, is proportional to the reciprocal of L (1/L). Stacking effects on the temperature distributions become clear for the device with thinner tSi, and tSi = 50 μm device has a different proportional constant for the region of larger L. Thermal simulations with an entire chip model show similar temperature distributions and the effects of bonding pads. Thermal transient phenomena in stacked ICs were analyzed under the pulsed heating and compared with simulation results. T rises abruptly after the heating pulse input and then gradually increases, and the thermal simulation reproduces the similar results. The test structure and the simulation modeling
can provide an effective way for analysis of thermal conduction in stacked ICs.

Index Terms—Integrated circuit (IC) thermal factors, IC design, IC measurements, temperature measurement, three dimensional (3-D) ICs

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Ketersediaan

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 3, AUGUST 2015

Subjek

SEMIKONDUKTOR
3-D
INTEGRATED CIRCUIT (IC)

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

Versi lain/terkait

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