e-journal

Effects of Abrasive Size Distribution in Chemical Mechanical Planarization: Modeling and Verification

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Abstract
Recently, a comprehensive model has been developed by Luo and Dornfeld (“Material removal mechanism in chemical mechanical polishing: theory and modeling,” IEEE
Trans. Semiconduct. Manufact., vol. 14, pp. 112–133, May 2001) to explain the material removal mechanism in chemical mechanical planarization (CMP). Based on the model, the abrasive size distribution influences the material removal from two aspects, one, the number of active abrasives, and the other, the size of the
active abrasives. In this paper, experimental evidence supporting this view of abrasive size effects is discussed. A detailed model of wafer-abrasive-pad contact is developed to explain how and where abrasive size distributions come into the comprehensive material removal model. A material removal rate formulation as a
function of abrasive size distribution is proposed and verified. In the future, the application of the model to the CMP process optimization, for example, improving the nonuniformity, or obtaining minimum surface scratching and preferred material removal rate by changing abrasive size distribution, may be attempted.

Index Terms—Active abrasive number and size, chemical mechanical planarization, modeling

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 16, NO. 3, AUGUST 2003

No. Panggil

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Penerbit

: IEEE., 2003

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 16, NO. 3, AUGUST 2003

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 16, NO. 3, AUGUST 2003

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

Versi lain/terkait

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