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Fluorocarbon Chemistry: A 0-Dimensional Model for Oxide and Nitride Dry Etching

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Abstract
In this paper, a 0-dimensional model for the understanding of dry etching characteristics in silicon oxide and nitride materials is reported. The model is applied to analyze the etching performances in a design of experiments where gas mixtures are varied in the fluorocarbon chemistry typical of the “protected sidewall” regime. The modeling analysis of flat sample etching allows for an accurate tuning of the selectivity’s behavior, and can be generalized to deal with patterned samples. In particular,
we apply a phenomenological technique to transform the equipment parameters in the microscopic quantities ruling the reagent-surface interactions. The correct prediction of the etch rate trends in flat samples and the sensibility to the different etching mechanisms for the nitride case demonstrate the reliability of the proposed approach.

Index Terms—Plasma etching, protected sidewall RIE, fluorocarbon plasma.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 3, AUGUST 2015

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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