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Variability Improvement by Si Surface Flattening of Electrical Characteristics in MOSFETs With High-k HfON Gate Insulator

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Abstract—Variability improvement of metal-oxidesemiconductor field-effect transistors (MOSFETs) characteristics with high-k HfON gate insulator by Si surface flattening was investigated. The Si surface flattening process was carried out by Ar/4.9%H2 anneal utilizing rapid thermal annealing system.
The HfON gate insulator was formed by the in-situ Ar/O2 plasma oxidation of HfN utilizing electron cyclotron resonance plasma sputtering followed by the post deposition anneal at 600 ◦C for 1 min. The Si surface flattening was found to significantly improve the threshold voltage variability (VTH)
of MOSFET with HfON gate insulator for the first time. Furthermore, the stability of the device characteristics was improved up to the measurement temperature of 100 ◦C by introducing the Si surface flattening process.

Index Terms—Electron cyclotron resonance (ECR) plasma sputtering, gate insulator, HfON, high-k, metal-oxidesemiconductor field-effect transistors (MOSFETs), Si surface flattening, variability.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

No. Panggil

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Penerbit

: IEEE., 2015

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 28, NO. 3, AUGUST 2015

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 28, NO. 3, AUGUST 2015

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

Versi lain/terkait

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