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Thermo-Mechanical Reliability of Double-Sided IGBT Assembly Bonded by Sintered Nanosilver

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Double-sided insulated gate bipolar transistor (IGBT) assemblies bonded by sintered nanosilver are fabricated in this paper. Die-shear tests reveal that the lowest bonding strength between the chip and the substrate of the assemblies is about 20 MPa. Furthermore, temperature cycling tests (−40 ◦C
to 150 ◦C) indicate that the shear strength declines as the number of cycles increases. In addition, X-ray photographs show increasing number and size of voids. The bonding area decreases with increasing number of cycles, as indicated by scanning acoustic microscopy. Finally, we study both the steady state and the transient thermal performance of the double-sided IGBT assembly by the finite-element method using the commercial code ANSYS to better understand the superiority of the assembly in thermal management.
Index Terms—Electronic packaging, insulated gate bipolar transistor (IGBT), reliability, temperature cycling, thermal stress.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

No. Panggil

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Penerbit

New York : IEEE., 2014

Deskripsi Fisik

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 14, NO. 1, MARCH 2014

Bahasa

English

ISBN/ISSN

1530-4388

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 14, NO. 1, MARCH 2014

Subjek

TEKNIK

Info Detail Spesifik

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Pernyataan Tanggungjawab

Yuli/Agus

Versi lain/terkait

Lampiran Berkas

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