Abstract Temperature distributions in 3-D integrated circuits (ICs) are analyzed with a test structure, which has a top-tier chip attached on a bottom dummy chip with adhesive layer. The devices with four kinds of top-tier chip thickness tSi of 50–410 μm were fabricated by a standard 0.18 μm CMOS process. The test structure consists of 24 sensor blocks, each of which has sensor p-n diodes…
Abstract Scaling challenges with NAND flash have forced manufacturers to consider monolithic 3-D process and device architectures as potential successor technologies. Those that involve a vertical cylindrical channel are regarded as favorites. These include bit-cost scalable (BiCS) NAND, pipe-shaped bit-cost scalable (p-BiCS) NAND, and terabit cell array transistor (TCAT) NAND. It has been ass…