Abstract A yield analysis method using basic yield and in-line defect information in a statistical model to determine root-causes of yield loss in semiconductor manufacturing is presented. The goal of this analysis method is to provide the fab process line management yield loss accounting for defects identified at inspected process layers. Quantifying these losses, in terms of yield loss perce…
Abstract Temperature distributions in 3-D integrated circuits (ICs) are analyzed with a test structure, which has a top-tier chip attached on a bottom dummy chip with adhesive layer. The devices with four kinds of top-tier chip thickness tSi of 50–410 μm were fabricated by a standard 0.18 μm CMOS process. The test structure consists of 24 sensor blocks, each of which has sensor p-n diodes…