e-journal

SiO2 Etching with Aqueous HF: Design and Development of a Laboratory-Scale Integrated Wet Etch/Dry Reactor

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Abstract—Etching of SiO2 films using aqueous HF-based chemistries is widely used in integrated circuit and microelectromechanical device industries. To precisely control film loss during cleaning or etching processes, good control over the contact time between the wet chemistry and the substrate is
necessary. An integrated wet etch and dry reactor system has been designed and fabricated by studying various geometrical configurations using computational fluid dynamics simulations incorporating
reaction kinetics from laboratory data and previously published information. The effect of various process parameters such as HF concentration, flow rate, and flow velocity on the etch rates and uniformity of thermally-grown silicon dioxide and borophosphosilicate glass films was studied. Simulations agree with experiments within experimental error. This reactor can also be used to wet etch/clean and dry other films in addition to SiO2 based films using aggressive chemistries in addition to aqueous HF under widely different process conditions.

Index Terms—Computational fluid dynamics (CFD), integrated clean, reaction kinetics, wet etch.

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Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 24, NO. 1, FEBRUARY 2011

No. Panggil

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Penerbit

: IEEE., 2011

Deskripsi Fisik

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 24, NO. 1, FEBRUARY 2011

Bahasa

English

ISBN/ISSN

0894-6507

Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

VOL. 24, NO. 1, FEBRUARY 2011

Subjek

SEMIKONDUKTOR

Info Detail Spesifik

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Pernyataan Tanggungjawab

ETY

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